600V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery

Super

超致半导体

600V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• Fast-Recovery body diode\n• Extremely Low Reverse Recovery Charge\n• 650V @TJ = 150 ℃\n• Typ. RDS(on) = 0.175Ω\n• Ultra Low Gate Charge (typ. Qg = 36.5nC)\n• 100% avalanche tested;

Super

超致半导体

600V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery

Super

超致半导体

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：498.44 Kbytes 页数：16 Pages

Infineon

英飞凌

600V 0.19(ohm) N-channel MOSFET

文件：1.31882 Mbytes 页数：10 Pages

MGCHIP

N-CHANNEL MOSFET in a TO-220FL Plastic Package

文件：1.394 Mbytes 页数：9 Pages

FOSHAN

蓝箭电子