SSF60R190S2

600V Super Junction Power MOSFET Gen-Ⅱ;

SSF60R190S2E/SSP60R190S2E

600V N-Channel Super-Junction MOSFET Gen-Ⅱ; • Multi-Epi process SJ-FET\n• 650V @TJ = 150 ℃\n• Typ. RDS(on) = 150mΩ\n• Ultra Low Gate Charge (typ. Qg = 31nC)\n• 100% avalanche tested\n;

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.\nSJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

SSF60R190S2E

SJ-MOS;

SLB60R190S2

600VN-channelMOSFET

SLF60R190S2

600VN-channelMOSFET

SLH60R190S2

600VN-channelMOSFET