500V N-Channel Super-Junction MOSFET With Fast-Recovery

Super

超致半导体

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.14Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：335.78 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best RDS(on) in TO220 • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound • Qualified for industrial grade applications according to JEDEC0)

文件：610.41 Kbytes 页数：10 Pages

INFINEON

英飞凌