COOLMOS

KINTAGO

金田谷

600V N-Channel MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• 650V @TJ = 150 ℃\n• Typ. RDS(on) = 0.34Ω\n• Ultra Low Gate Charge (typ. Qg = 17.5nC)\n• 100% avalanche tested;

Super

超致半导体

N-Channel 650 V (D-S) MOSFET

文件：1.035089 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03491 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03494 Mbytes 页数：8 Pages

VBSEMI

微碧半导体