TOP LED DEVICE

文件：519.01 Kbytes 页数：11 Pages

SEOUL

首尔半导体

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

文件：188.6 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

文件：58.96 Kbytes 页数：6 Pages

NEC

瑞萨

Axial Lead and Cartridge Fuses - Ceramic Body

文件：39.18 Kbytes 页数：1 Pages

LITTELFUSE

力特

EMC version with internal stainless steel mesh 횠8.1mm mounting

文件：459.12 Kbytes 页数：5 Pages

MARL

TREK 677B

TYPICAL APPLICATIONS  Electrostatic beam deflection  Electrooptic modulation  Electrophoresis research  Piezoelectric poling and driving

文件：221.93 Kbytes 页数：4 Pages

ADVANCEDENERGY

先进能源工业