High Current Density Surface Mount Schottky Barrier Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive orderin

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VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：111.01 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：97.77 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive orderin

文件：109.61 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：97.77 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：86.99 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nLow forward voltage drop, low power losses;

Vishay

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

Very low profile - typical height of 1.1 mm\n Ideal for automated placement\n Low forward voltage drop, low power losses\n\n ;

Vishay

威世

肖特基二极管与整流器 3A,30V,SM SKY RECT.

Vishay

威世

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 3A TO277A

Vishay General Semiconductor - Diodes Division