High Current Density Surface-Mount Schottky Barrier Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering

文件：103.13 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Ideal for automated placement

文件：525.16 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface-Mount Schottky Barrier Rectifier - High Barrier Technology for Improved High Temperature Performance

Very low profile - typical height of 1.0 mm\nIdeal for automated placement\nLow forward voltage drop, low power losses;

Vishay

威世科技

High Current Density Surface-Mount Schottky Barrier Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering

文件：103.13 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 2A DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 2A DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 2A DO220AA

Vishay General Semiconductor - Diodes Division