High Current Density Surface-Mount Schottky Barrier Rectifier

FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available • Material categorizat

文件：102.37 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：87.72 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：253.44 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：86.4 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount High Current Density Surface Mount

文件：87.65 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifier

文件：82.27 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：104.94 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

High Current Density Surface-Mount Schottky Barrier Rectifier

Very low profile - typical height of 1.0 mm\nIdeal for automated placement\nLow forward voltage drop, low power losses;

Vishay

威世

Low VF High Current Density Surface-Mount Schottky Barrier Rectifiers

FEATURES . Very low profile - typical height of 1.0 mm . Ideal for automated placement . Low forward voltage drop, low power losses . High efficiency . Low thermal resistance . Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C . AEC-Q101 qualified available . Material categoriza

文件：101.84 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

文件：79.13 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世