首页 >SS2609ESTT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SS2609ESTT | Hall Latch - High Sensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | |
BroadbandPhotodiodeModule The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic | EMCORE Emcore Corporation | EMCORE | ||
2609BBroadbandPhotodiodeModule Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro | agere Agere Systems | agere | ||
2609CBroadbandPhotodiodeModule Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa | agere Agere Systems | agere | ||
SimpleDriveRequirement,SmallPackageOutline | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
SimpleDriveRequirement,SmallSize&LowerProfile | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2 | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-Ch20VFastSwitchingMOSFETs Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved. | FETEKFETek Technology Corp. 台湾东沅东沅科技股份有限公司 | FETEK |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BROADCOM/博通 |
22+ |
BGA |
1260 |
原装正品，支持实单。 |
询价 | ||
BROADCOM |
22+ |
NA |
200 |
原装正品支持实单 |
询价 | ||
Broadcom(博通) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 | ||
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | |||
Broadcom(博通) |
22+ |
N/A |
3206 |
原装正品物料 |
询价 | ||
Broadcom(博通) |
23+ |
15000 |
专业帮助客户找货 配单,诚信可靠! |
询价 | |||
Broadcom(博通) |
23+ |
Original |
6000 |
原装,渠道供应 |
询价 | ||
BROADCOM/博通 |
23+ |
BGA |
100 |
正规渠道原装正品 |
询价 | ||
BROADCOM |
23+ |
NA |
1000 |
原装正品 渠道优势 实单联系 |
询价 | ||
BROADCOM |
25+ |
20000 |
原装现货,可追溯原厂渠道 |
询价 |
