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SS24T3

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switc

文件:64.59 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

SS24T3

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switc

文件:69.78 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

SS24T3G

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switc

文件:64.59 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

SS24T3G

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switc

文件:69.78 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

SS24T3G

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件:201.57 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

SS24T3G

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件:187.98 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

SS24T3G

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件:537.18 Kbytes 页数:3 Pages

SY

顺烨电子

SS24T3G

Surface Mount Schottky Power Rectifier

文件:77.78 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

SS24T

肖特基整流二极管

2A,40V,Schottky rectifier diode

DiYi

迪一电子

SS24T3G

肖特基二极管

ONSEMI

安森美半导体

技术参数

  • 平均整流电流IF:

    2A

  • 正向压降VF:

    500mV @ 2A

供应商型号品牌批号封装库存备注价格
ON(安森美)
24+
标准封装
9048
全新原装正品/价格优惠/质量保障
询价
ON
1728+
?
6500
只做原装进口,假一罚十
询价
ON
25+
ON
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ONS
23+
N/A
8560
受权代理!全新原装现货特价热卖!
询价
ON-SEMI
25+23+
New
31035
绝对原装正品现货,全新深圳原装进口现货
询价
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ON/安森美
21+
NA
12820
只做原装,质量保证
询价
ON/安森美
22+
N/A
331288
现货,原厂原装假一罚十!
询价
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
更多SS24T供应商 更新时间2025-11-26 9:38:00