CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：239.79 Kbytes 页数：8 Pages

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Hall Effect Omnipolar Switches

The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. \n●Operation down to 2.5V\nCMOS technology\n●Micropower consumption for battery powered applications\n●High sensitivity for direct reed switch replacement applications\n●Omnipolar output switches with absolute value of North or South pole from magnet\nOptimized sleep mode for extended operating life;

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：249.41 Kbytes 页数：8 Pages

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：239.79 Kbytes 页数：8 Pages

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：249.41 Kbytes 页数：8 Pages

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：239.79 Kbytes 页数：8 Pages

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：249.41 Kbytes 页数：8 Pages

SECELECTRONICS

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：239.79 Kbytes 页数：8 Pages

SECELECTRONICS

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：249.41 Kbytes 页数：8 Pages

SECELECTRONICS

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CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description The SS239 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumptio

文件：239.79 Kbytes 页数：8 Pages

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