丝印：SS212；Package：SMA；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.26843 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：SS212；Package：SMA；Surface Mount Schottky Barrier Rectifier

文件：1.4222 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：SS212；Package：SMAF；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.356 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

compact external fitting with npt taper thread

文件：379.4 Kbytes 页数：1 Pages

CYNERGY3

Phoneme Speech synthesizer

文件：3.32108 Mbytes 页数：20 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel JFET

DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for

文件：22.85 Kbytes 页数：2 Pages

Calogic