1.0AMP. Low VF Schottky Barrier Rectifiers

Features Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SS12AL~SS16AL). standard >10ΚV(SS110AL~SS120AL). Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. Ultra

文件：1.13685 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：SS14；Package：SMB；Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

文件：63.45 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：SS14；Package：SMB；Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

文件：115.51 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：SS14；Package：SMB；Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

文件：58.16 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：SS14；Package：SMB；Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

文件：64.31 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

文件：64.31 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

文件：63.45 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：SS14；Package：SMB；PNP Transistor

文件：69.19 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：SS14；Package：SMB；12 V, 3 A, Low VCE(sat) PNP Transistor

文件：63.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：SS14；Package：SMB；12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件：102.7 Kbytes 页数：5 Pages

ONSEMI

安森美半导体