丝印：SS12；Package：SMA；Schottky Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip−bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse po

文件：131.63 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：SS12；Package：SMA(DO-214AC)；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * High reliability * RoHS product for packing code suffix G Halogen free product for packing code suffix H * Moisture Sensitivity Level 1

文件：550.44 Kbytes 页数：2 Pages

PACELEADER

霈峰

丝印：SS12；Package：SMA；Schottky Barrier Rectifiers

文件：551.83 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：SS12；Package：SMA；Surface Mount Schottky Barrier Rectifier

文件：472.85 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：SS12；Package：SMA；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.25902 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：SS12；Package：SMAF；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.34587 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：SS12；Package：SMB；Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

文件：115.51 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：SS12；Package：SMB；Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

文件：63.45 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：SS12；Package：SMB；Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

文件：64.31 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：SS12；Package：SMB；Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

文件：58.16 Kbytes 页数：4 Pages

ONSEMI

安森美半导体