1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.64 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.64 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Power switching application

Description: The SSF1020 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house.

文件：335.08 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

100V N-Channel MOSFET

DESCRIPTION The SSF1020 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house.

文件：1.05527 Mbytes 页数：5 Pages

GOOD-ARK

固锝电子

Advanced trench process technology

Description: The SSF1020A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020A is assembled in high reliability and qualified assembly house.

文件：459.18 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子