rohs compliance

文件：988.61 Kbytes 页数：1 Pages

SURGE

SS Series

文件：340.3 Kbytes 页数：2 Pages

SHARMA

丝印：SS；Package：SOT-323；N-Ch Enhancement Mode Power MOSFET

文件：251.74 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：SS；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：SS；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：SS；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：SS；Package：SOT-23；N-Channel MOSFET

Features ● VDS(V)=50V ● ID=300mA(VGS=10V) ● RDS(ON)

文件：1.48102 Mbytes 页数：4 Pages

UMW

友台半导体

丝印：SS；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

文件：1.27011 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：SS；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 50V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：609.07 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：SS；Package：SOT-23；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

文件：898.67 Kbytes 页数：5 Pages

SY

顺烨电子