丝印：SS；Package：SOT-323；N-Ch Enhancement Mode Power MOSFET

文件：251.74 Kbytes 页数：3 Pages

SECOS

喜可士

SS Series

文件：340.3 Kbytes 页数：2 Pages

SHARMA

rohs compliance

文件：988.61 Kbytes 页数：1 Pages

Surge

丝印：SS；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：SS；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：SS；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：SS；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

文件：1.27011 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：SS；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 50V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：609.07 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：SS；Package：SOT-23；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

文件：898.67 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：SS；Package：SOT-23；N-Channel MOSFET

Features ● VDS(V)=50V ● ID=300mA(VGS=10V) ● RDS(ON)

文件：1.48102 Mbytes 页数：4 Pages

UMW

友台半导体