Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

文件：267.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

文件：267.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Surface Mount, 2.0 A, 60 V, SMB Package

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling d • Compact Package with J–Bend Leads Ideal for Automated Handling\n• AEC-Q101 Qualified and PPAP Capable\n• Highly Stable Oxide Passivated Junction\n• Guardring for Over–Voltage Protection\n• Low Forward Voltage DropMechanical Characteristics:\n• Case: Molded Epoxy\n• Epoxy Meets UL94, VO at 1/8 inch;

ONSEMI

安森美半导体

Schottky Diodes

文件：1.33066 Mbytes 页数：3 Pages

KEXIN

科信电子

DOCSIS 2.0 Tracer for DOCSIS 1.0, 1.1, and 2.0 Protocol Analysis

文件：325.74 Kbytes 页数：1 Pages

FILTRONIC

2.0 AMP LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

文件：48.22 Kbytes 页数：2 Pages

GWSEMI

唯圣电子