中低压 TTMOS

Sanrise

尚阳通

SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 30 nC (typ.) (4) Low reverse curre

文件：440.81 Kbytes 页数：7 Pages

TOSHIBA

东芝

NPT SERIES N-CHANNEL IGBT

文件：153.29 Kbytes 页数：3 Pages

UTC

友顺

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

文件：81.67 Kbytes 页数：7 Pages

Intersil

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

文件：217.6 Kbytes 页数：8 Pages

Fairchild

仙童半导体

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a b

文件：82.69 Kbytes 页数：7 Pages

Intersil