ST30100

SiliconDualPowerRectifier

SiliconDualPowerRectifier ●GlassPassivatedDie ●Glasstometalsealconstruction ●VRRM200to1000V ●250ASurgeRating ●AvailableasCommonAnode,CommonCathode,orDoubler

ST30100

SCHOTTKYRECTIFIER

Features: •150°CTJoperation •Centertapconfiguration •Ultralowforwardvoltagedrop •Highpurity,hightemperatureepoxyencapsulationforenhancedmechanicalstrengthandmoistureresistance •Highfrequencyoperation •Guardringforenhancedruggednessandlongtermreliability •

ST30100

SchottkyBarrierRectifier

ST30100

SCHOTTKYRECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo

ST30100

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

SpecificationFeatures: HighVoltageWideRangeSelection,100V,150V&200V HighSwitchingSpeedDevice LowForwardVoltageDrop LowPowerLossandHighEfficiency GuardRingforOver-voltageProtection HighSurgeCapability RoHSCompliant MatteTin(Sn)LeadFinish TerminalLeadsSurface

ST30100C

SCHOTTKYRECTIFIER

Features: •150°CTJoperation •Centertapconfiguration •Ultralowforwardvoltagedrop •Highpurity,hightemperatureepoxyencapsulationforenhancedmechanicalstrengthandmoistureresistance •Highfrequencyoperation •Guardringforenhancedruggednessandlongtermreliability •

ST30100C

30AmpSchottkyBarrierRectifier100Volts

ST30100C

SCHOTTKYRECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnology Thisis

ST30100DJF

Verysmallconductionlosses

Features: •Ultralowforwardvoltagedrop •Verysmallconductionlosses •Negligibleswitchinglosses •Extremelyfastswitching •Lowthermalresistance •Avalanchecapabilityspecified •Thinpackage:1mm •ThisisaPb−FreeDevice •AllSMCpartsaretraceabletothewaferlot •A

ST30100DJF

SCHOTTKYRECTIFIER

Features Ultralowforwardvoltagedrop Verysmallconductionlosses Negligibleswitchinglosses Extremelyfastswitching Lowthermalresistance Avalanchecapabilityspecified Thinpackage:1mm ThisisaPb−FreeDevice AllSMCpartsaretraceabletothewaferlot Ad