SSTS3060CT

HighJunctionTemperature

ST3060

SiliconDualPowerRectifier

SiliconDualPowerRectifier ●GlassPassivatedDie ●Glasstometalsealconstruction ●VRRM200to1000V ●250ASurgeRating ●AvailableasCommonAnode,CommonCathode,orDoubler

ST3060C

SCHOTTKYRECTIFIER

ST3060C

SCHOTTKYRECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation TrenchMOSSchottkytechnology ThisisaPb−FreeDevice 

ST3060DJF

Lowthermalresistance

ST3060DJF

SCHOTTKYRECTIFIER

Features Ultralowforwardvoltagedrop Verysmallconductionlosses Negligibleswitchinglosses Extremelyfastswitching Lowthermalresistance Avalanchecapabilityspecified Thinpackage:1mm ThisisaPb−FreeDevice AllSMCpartsaretraceabletothewaferlot Ad

ST3060LC

Highfrequencyoperation

ST3060LC

SCHOTTKYRECTIFIER

Features 125'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

STB3060C

SCHOTTKYRECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation TrenchMOSSchottkytechnology ThisisaPb−FreeDevice 

STF3060C

SCHOTTKYRECTIFIER