Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：175.37 Kbytes 页数：2 Pages

MOSPEC

统懋

Isolated 20.0AMP. Schottky Barrier Rectifiers

Isolated 20.0AMP. Schottky Barrier Rectifiers Features
For surface mounted application
Low power loss, high efficiency
High current capability, low VF
High reliability
Epitaxial construction
Guard-ring for transient protection

文件：273.98 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • High surge capability

文件：335.42 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

文件：203.68 Kbytes 页数：2 Pages

TSC

台湾半导体

20.0AMPS. Isolated Schottky Barrier Rectifiers

文件：190.8 Kbytes 页数：2 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件：224.85 Kbytes 页数：4 Pages

TSC

台湾半导体

20A, 100V, Schottky Rectifier

TSC

台湾半导体

Package：TO-220-3 全封装，隔离接片；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTT 100V ITO220AB

Taiwan Semiconductor Corporation

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to100 Volts CURRENT 16.0 Amperes FEATURES · Plastic package has Underwriters Laboratory Flammability classification 94V-O Flame Retardant Epoxy Molding Compound · Exceeds environmental standards of MIL-S-19500/228 · Low

文件：46.48 Kbytes 页数：2 Pages

MIC

昌福电子

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：174.86 Kbytes 页数：2 Pages

MOSPEC

统懋