Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual SchottkyBarrier Power Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rect

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MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS

FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications.

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SAMYANG

三阳电子

10.0AMPS. Surface Mount Schottky Barrier Rectifiers

文件：154.94 Kbytes 页数：2 Pages

TSC

台湾半导体

10.0 AMPS. Surface Mount Schottky Barrier Rectifiers

文件：161.58 Kbytes 页数：2 Pages

TSC

台湾半导体