SCHOTTKY BARRIER RECTIFIER

Features • High current capability, low VF • Metal to silicon rectifier, majority carrier conduction • Low power loss, high efficiency • Plastic package has UL flammability classification 94V-0 • Guard ring for transient protection • High surge capacity • For use in low voltage, high freque

文件：368.97 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

40A SCRs

DESCRIPTION The TYNx40 series is suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power motor c

文件：50.08 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：79.35 Kbytes 页数：16 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：79.35 Kbytes 页数：16 Pages

NEC

瑞萨