SCHOTTKY BARRIER RECTIFIER

Features • High current capability, low VF • Metal to silicon rectifier, majority carrier conduction • Low power loss, high efficiency • Plastic package has UL flammability classification 94V-0 • Guard ring for transient protection • High surge capacity • For use in low voltage, high freque

文件：368.97 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

肖特基整流管

ST

意法半导体

DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND830 is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the devices against low energy spikes (see ISO7637 transient compatibility table)

文件：308.39 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND830SP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table

文件：266.39 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

QUAD CHANNEL HIGH SIDE DRIVER

Description The VNQ830 is a quad HSD formed by assembling two VND830 chips in the same SO-28 package. The VND830 is a monolithic device made using| STMicroelectronics™ VIPower™ M0-3 Technology. The device is intended for driving any type of multiple load with one side connected to ground. Featur

文件：308.59 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体