RF POWER VDMOS TRANSISTOR

文件：62.46 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

文件：36.38 Kbytes 页数：2 Pages

POLYFET

RECTIFIERS

DESCRIPTION The UES704 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. The low thermal resistance and forward voltage drop of this series allows the user to replace DO-5 size devices in

文件：127.88 Kbytes 页数：3 Pages

MICROSEMI

美高森美

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 3K at IC=1 Amp * Ptot=1 Watt APPLICATIONS * Lamp, solenoid and relay drivers

文件：72.59 Kbytes 页数：3 Pages

ZETEX