SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

文件：36.4 Kbytes 页数：2 Pages

Polyfet

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 70 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability

文件：880.66 Kbytes 页数：5 Pages

RECTRON

丽正国际

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 70 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability

文件：880.66 Kbytes 页数：5 Pages

RECTRON

丽正国际

RF POWER VDMOS TRANSISTOR

文件：61.91 Kbytes 页数：2 Pages

Polyfet

Schottky Diodes

Rectron

丽正国际

Schottky Diodes

Rectron

丽正国际