E Series Power MOSFET With Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • 175 °C operating temperature • AEC-Q101 qualified • Ultra low gate charge (Qg) • Avala

文件：321.05 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diodes

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: fo

文件：207.51 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司