Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Wettable flank terminals for AOI • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：177.96 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

• TrenchFET® power MOSFET\n• 100 % Rg and UIS tested;

Vishay

威世

Epitaxial planar NPN/PNP silicon transistor

Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW(Max.) • Both 2SA1980 chip and 2SC5343 chip in SOT-26 Package

文件：287.49 Kbytes 页数：4 Pages

AUK

Epitaxial planar NPN/PNP silicon transistor

Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW(Max.) • Both 2SA1980 chip and 2SC5343 chip in SOT-26 Package

文件：333.06 Kbytes 页数：6 Pages

KODENSHI

可天士

T4/T7 Series NEMA 4X, 7/9 Temperature Switches

FEATURES Precision SPDT or DPDT snap-acting micro switch operation Single setpoint adjustable from 0-100% of range Fixed or limited adjustable deadband Internal set point locking screw (T4) Direct or remote reading thermal systems Choice of temperature ranges (from -40 °F to 750 °F) Exp

文件：1.0662 Mbytes 页数：4 Pages

ASHCROFT

雅斯科