Package：轴向；包装：散装 类别：电阻器 通孔式电阻器 描述：RES 0.1 OHM 5% 10W AXIAL

TE Connectivity Passive Product

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 64A, RDS (ON) = 9.6 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 15.5 mW @VGS = 6V.

文件：860.38 Kbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 65A, RDS (ON) = 9.4 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 14 mW @VGS = 4.5V.

文件：860.13 Kbytes 页数：6 Pages

CET-MOS

华瑞

N-Ch Trench MOSFET

文件：467.56 Kbytes 页数：8 Pages

KODENSHI

可天士