Automotive P-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912

文件：211.65 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：210.73 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：221.23 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：221.23 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：202.92 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：202.92 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：199.63 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：333.14 Kbytes 页数：2 Pages

ISC

无锡固电

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：199.63 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：189.63 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司