Automotive N-Channel 60 V (D-S) 175 °C MOSFET

• TrenchFET® Gen IV power MOSFET\n• AEC-Q101 qualified\n• 100 % RG and UIS tested;

Vishay

威世

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Wettable flank terminals • Low thermal resistance with 0.75 mm profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：174.63 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Wettable flank terminals • Low thermal resistance with 0.75 mm profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：218.87 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：50.41 Kbytes 页数：3 Pages

WTE

Won-Top Electronics