Automotive N-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Fully lead (Pb)-free device • Thin 1.9 mm height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：831.74 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Fully lead (Pb)-free device • Thin 1.9 mm height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：830.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 40 V (D-S) 175 째C MOSFET

文件：839.27 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 100 V (D-S) 175 째C MOSFET

文件：212.49 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Fully lead (Pb)-free device • Thin 1.9 mm height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：831.74 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 Rg and UIS tested • Fully lead (Pb)-free device • Thin 1.9 mm height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：830.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

·TrenchFET® power MOSFET\n·AEC-Q101 qualified\n·100 % RG and UIS tested;

Vishay

威世