P-Channel Enhancement Mode Field Effect Transistor

The SQ2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.\n1. VDS = -20V,ID = -2A\n2. RDS(ON) <160mΩ @VGS=-2.5V\n3. RDS(ON) <120mΩ @VGS=-4.5V

Holychip

芯圣电子

Automotive P-Channel 12 V (D-S) 175 째C MOSFET

文件：291.03 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Automotive P-Channel 40 V (D-S) MOSFET

文件：279.26 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Automotive P-Channel 60 V (D-S) 175 째C MOSFET

文件：256.279 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司