CoolMOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：230.42 Kbytes 页数：10 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤160mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.55 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

文件：813.11 Kbytes 页数：12 Pages

INFINEON

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

Cool MOS??Power Transistor

文件：813.11 Kbytes 页数：12 Pages

INFINEON

英飞凌