Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：254.59 Kbytes 页数：11 Pages

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

· DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.73 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

• Innovative high voltage technology\n• Worldwide best R DS(on) in TO-251 and TO-252\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n\n优势:;

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：254.59 Kbytes 页数：11 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

文件：338.28 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

· DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.73 Kbytes 页数：2 Pages

ISC

无锡固电