Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：255 Kbytes 页数：11 Pages

Infineon

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isc N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤380mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.99 Kbytes 页数：2 Pages

ISC

无锡固电

COOL MOS POWER TRANSISTOR

文件：769.53 Kbytes 页数：12 Pages

Infineon

英飞凌

COOL MOS POWER TRANSISTOR

文件：769.53 Kbytes 页数：12 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 500V CoolMOS™ C3 is 500V CoolMOS™ CE >> Click & go to 500V CoolMOS™ CE \n500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. ·Low specific on-state resistance\n ·(R on*A)\n ·Very low energy storage in output capacitance (E oss) @400V\n ·Low gate charge (Q g)\n ·Fieldproven CoolMOS™ quality\n ·CoolMOS™ technology has been manufactured by Infineon since 1998;

Infineon

英飞凌