SQ202

SILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

SQJ202EP

AutomotiveDualN-Channel12V(D-S)175°CMOSFETs

SQJ202EP

AutomotiveDualN-Channel12V(D-S)175째CMOSFETs

SQJ202EP

AutomotiveDualN-Channel12V(D-S)175°CMOSFETs

FEATURES •TrenchFET®powerMOSFET •AEC-Q101qualifiedd •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912

SR202

2.0AMPS.SCHOTTKYBARRIERRECTIFIERS

SR202

SCHOTTKYBARRIERRECTIFIERS(2.0A,20-60V)

UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarityprotectiondiodes.

SR202

2AmpSchottkyBarrierRectifier20-60Volts

Features •GuardRingProtection •LowForwardVoltageDrop •LowPowerLossforHighEfficiency •ReverseEnergyTested •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivit

SR202

2.0AMPS.SchottkyBarrierRectifiers

SR202

2.0AMPS.SchottkyBarrierRectifiers

Features ◇Lowpowerloss,highefficiency. ◇Highcurrentcapability,LowVF. ◇Highreliability ◇Highsurgecurrentcapability. ◇Epitaxialconstruction. ◇Guard-ringfortransientprotection. ◇Foruseinlowvoltage,highfrequency inventor,freewheeling,andpolarity protecti

SR202

CURRENT2.0AmperesVOLTAGE20to100Volts

Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi