Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：341.43 Kbytes 页数：13 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤190mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance a

文件：338.99 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：756.75 Kbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：2.05204 Mbytes 页数：14 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 500V CoolMOS™ C3 is CoolMOS™ P7. \n 500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：2.05204 Mbytes 页数：14 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：756.75 Kbytes 页数：14 Pages

Infineon

英飞凌