SPP11N65C3中文资料500 V-950 V CoolMOS™ N 沟道功率 MOSFET数据手册Infineon规格书

描述 Description

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7.

特性 Features

• Low specific on-state resistance (RDS(on)*A)
• Very low energy storage in output capacitance (Eoss) @400V
• Low gate charge (Qg)
• Fieldproven CoolMOS™ quality
• CoolMOS™ technology has been manufactured by Infineon since 1998

优势:
• High efficiency and power density
• Outstanding cost/performance
• High reliability
• Ease-of-use

应用 Application

• Consumer
• PC power
• Adapter

简介

SPP11N65C3属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的SPP11N65C3晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。