Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：335.41 Kbytes 页数：12 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤3mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：281.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

文件：1.035359 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：477.78 Kbytes 页数：12 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

• Innovative high voltage technology\n• Worldwide best R DS(on) in TO-251 and TO-252\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n\n优势:;

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：477.78 Kbytes 页数：12 Pages

Infineon

英飞凌