SPP11N60S5

isc N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SPP11N60S5

N-Channel 650 V (D-S) MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

SPP11N60S5

Cool MOS??Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

SPP11N60S5

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPP11N60S5_09

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

11N60S5

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

11N60S5

N-Channel650V(D-S)MOSFET

ISPW11N60S5

iscN-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SPB11N60S5

N-Channel650V(D-S)MOSFET

SPB11N60S5

IscN-ChannelMOSFETTransistor