Pushbutton switch, side actuation, illumination

文件：976.56 Kbytes 页数：2 Pages

APEX-ELECTRONICS

Battery protection

DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：288.01 Kbytes 页数：1 Pages

SILIKRON

新硅能微电子

20V N-Channel MOSFET

DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：307.54 Kbytes 页数：4 Pages

GOOD-ARK

固锝电子

N-channel Enhancement-mode Power MOSFET

文件：316.23 Kbytes 页数：5 Pages

SSC

Silicon Standard Corp.