Pushbutton switch, side actuation, illumination

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APEX-ELECTRONICS

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

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ONSEMI

安森美半导体

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

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MOSPEC

统懋

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies. • Circuit for dynamic braking of motor regenerative energy INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS: • For P-Side IGBTs : Drive circuit, High

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POWEREX