Common-Drain Dual N-Channel Enhancement Mode MOSFET

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SYNC-POWER

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MOSFET

SYNC Power

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Common-Drain Dual N-Channel Enhancement Mode MOSFET

文件：368.05 Kbytes 页数：8 Pages

SYNC-POWER

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Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

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Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：646.09 Kbytes 页数：7 Pages

SAMHOP

三合微科

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 7.0 S (typ.) ● Low leakage current: IDSS = 10 µA (ma

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TOSHIBA

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