首页 >SPN01N60C3XT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant;availableinHalogenfreeandcompounda) •Qualifiedaccordin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
SPN01N60C3XT
- 制造商：
Infineon Technologies AG
- 功能描述：
Trans MOSFET N-CH 650V 0.3A 4-Pin(3+Tab) SOT-223
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
INFINEON |
07+ |
SOT-223 |
10000 |
询价 | |||
Infineon |
17+ |
SOT-223 |
6200 |
询价 | |||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON |
22+ |
SOT223 |
1000 |
原装现货库存.价格优势 |
询价 | ||
INFINEON |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
INFINEON |
20+ |
SOT-223 |
90000 |
原装正品现货/价格优势 |
询价 | ||
INFINEON |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
INFINEON |
21+ |
35200 |
一级代理/放心采购 |
询价 |
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