Unmounted Laser Bars 20 W cw ... 100 W qcw

Features • Unmounted monolithic linear array • High efficiency MOVPE-grown quantum well structure • Highly reliable strained layer InGa(Al)As/GaAs material • Standard wavelength selection is ± 3 nm, others on request • Solderable p- and n-side metalization Applications • Pumping of solid st

文件：20.56 Kbytes 页数：2 Pages

SIEMENS

西门子

Un-mounted Laser Bars, 50 Fill-factor, 980 nm

Features • Un-mounted monolithic linear array • High-efficiency MOVPE-grown quantum-well structure • Highly reliable strained-layer InGa(Al)As/GaAs material • Standard wavelength selection is ± 3 nm • Other pulse wavelengths are available upon request • Solderable p- and n-side metallization

文件：187.79 Kbytes 页数：4 Pages

OSRAM

艾迈斯欧司朗

Un-mounted Laser Bars, 50 Fill-factor, 980 nm

文件：126.4 Kbytes 页数：4 Pages

OSRAM

艾迈斯欧司朗

COG

Oristech

上传：深圳市华康联电子科技有限公司

DIP

OSRAM

艾迈斯欧司朗

上传：深圳市吉利鑫科技发展有限公司