SPI21N50C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPI21N50C3

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPI21N50C3

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPI21N50C3

Marking：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

SPP21N50C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

SPP21N50C3

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge

SPP21N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPP21N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancea

SPW21N50C3

N-ChannelMOSFETTransistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPW21N50C3

CoolMOSPowerTransistor