Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation

Product Description Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TO

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SIRENZA

Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation

Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output T

文件：583.86 Kbytes 页数：5 Pages

SIRENZA

Low Noise pHEMT GaAs FET

[Sirenza] Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excelle

文件：583.11 Kbytes 页数：5 Pages

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Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation

Qorvo

威讯联合

0.1 GHz - 12 GHz low noise PHEMT GaAs FET

Stanford Microdevices

0.1 GHz - 4 GHz low noise PHEMT GaAs FET

Stanford Microdevices