TTA005

BipolarTransistorsSiliconPNPEpitaxialType

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=200to500(IC=-0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.27V(max)(IC=-1.6A,IB=-53mA) (3)High-speedswitching:tf=55ns(typ.)

TTC005

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TVU005

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITVU005isaCommonEmitterDeviceDesignedforHighLinearityClassATelevisionBandIVandVTransmitters. FEATURESINCLUDE: •GoldMetalization •EmitterBallasting

TVU005B

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheTVU005BisaCommonEmitterDeviceDesignedforHighLinearityClassABandIVandVTelevisionTransmitters. FEATURESINCLUDE: •HighGain-13dBmin. •GoldMetalization •EmitterBallasting

TVV005

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITVV005isDesignedforTelevisionBandIIIApplicationsupto225MHz. FEATURES: •CommonEmitter •PG=15dBat5.0W/225MHz •Omnigold™MetalizationSystem

TVV005

NPNSILICONRFPOWERTRANSISTOR

UBM005

5.2Øx20mm

UBM-A005

5.2Øx20mm

UBM-P005

5.2Øx20mm

UDA005

5.2Øx20mm