Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：263.73 Kbytes 页数：13 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • High fast switching Power Supply • FEATURES • Drain-source on-resistance: RDS(on) ≤ 0.28Ω@10V • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：337.27 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

文件：260.91 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dtrated • High peak current capability • Qualified according to JEDEC for target applications CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV

文件：342.77 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

文件：689.7 Kbytes 页数：14 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

文件：689.7 Kbytes 页数：14 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.\n Replacement for • Fourth series of CoolMOS™ market entry in 2004\n• Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low\n• Specific for phase-shift ZVS and DC-AC power applications\n\n优势:\n• Improved efficiency\n• More efficient, more compact, lighter and cooler\n• Outstanding reliability with prov;

Infineon

英飞凌