CoolMOS Power Transistor

CoolMOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dtrated • Improved transconductance • Fully isolated packag

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Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

文件：260.769 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor

文件：227.83 Kbytes 页数：11 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：227.83 Kbytes 页数：11 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌